Silicon carbide dry etching technique for pressure sensors design

This paper presents the results of an in-depth study of the plasma-chemical etching (PCE) process of single-crystal silicon carbide (SiC) in SF6/O2 inductively coupled plasma (ICP). Using the method of optical emission spectroscopy (OES) we have examined the influence of RF power, bias voltage, pressure in the reaction chamber, and gas mixture composition on SiC PCE as well as the applicability of the OES technique for optimization and...