Original paper
Investigation of abrasive-free slurry for polysilicon buffing chemical mechanical planarization
Volume: 128, Pages: 105755 - 105755
Published: Jun 1, 2021
Abstract
Abrasive-free slurries which control polysilicon removal and surface roughness are highly desirable for polysilicon buffing chemical mechanical planarization (CMP). Here, we show that the addition of poly(ethylene glycol) (PEG) to poly(diallyldimethylammonium chloride) (PDADMAC) solutions inhibits adsorption of PDADMAC on polysilicon films. The effects of PEG additive on polysilicon static etching and removal behavior during CMP were...
Paper Details
Title
Investigation of abrasive-free slurry for polysilicon buffing chemical mechanical planarization
Published Date
Jun 1, 2021
Volume
128
Pages
105755 - 105755
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