Deposition amount effects on the microstructure of ion-beam-sputtering grown Mn_0.03Ge_0.97 quantum dots for spintronic applications

Here, a relative simpler and lower cost method, ion beam sputtering deposition was applied to fabricate diluted magnetic Mn x Ge1-x quantum dots (QDs). The effects of Ge-Mn co-deposition amount on the morphology and crystallization of Mn0.03Ge0.97 QDs were investigated systematically by employing the atomic force microscopy and Raman spectroscopy techniques. It can be seen that the morphology, density, and crystallinity of Mn0.03Ge0.97 QDs...