Direct Evidence for Charge Compensation-Induced Large Magnetoresistance in Thin WTe₂

Since the discovery of extremely large nonsaturating magnetoresistance (MR) in WTe2, much effort has been devoted to understanding the underlying mechanism, which is still under debate. Here, we explicitly identify the dominant physical origin of the large nonsaturating MR through in situ tuning of the magneto-transport properties in thin WTe2 film. With an electrostatic doping approach, we observed a nonmonotonic gate dependence of the MR. The...