Chemical and structural characterization of tungsten nitride (WNx) thin films synthesized via Gas Injection Magnetron Sputtering technique

Tungsten nitride (WNx) thin films were synthesized on the silicon substrates by way of Gas Injection Magnetron Sputtering (GIMS) technique. Pulsed discharge conditions, generated in the GIMS method, were optimized to maintain the nitrogen partial pressure in the range of an order of 10−3 to 10−1 Pa by a periodical injection of gas doses. In this way, we could increase the mean free path of atomic species and preserve their kinetic energy, in...