Effect of annealing on the structural, optical and electrical properties of ITO films by RF sputtering under low vacuum level

Indium tin oxide (ITO) thin films were prepared by RF sputtering of ceramic ITO target in pure argon atmosphere at a high base pressure of 3×10−4 mbar without substrate heating and oxygen admittance. The use of pure argon during deposition resulted in films with high transparency (80–85%) in the visible and IR wavelength region. The films were subsequently annealed in air in the temperature range 100–400 °C. The annealed films show decreased...