Collapse of the low temperature insulating state in Cr-doped V2O3 thin films
Abstract
We have grown epitaxial Cr-doped V2O3 thin films with Cr concentrations between 0% and 20% on (0001)-Al2O3 by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up...
Paper Details
Title
Collapse of the low temperature insulating state in Cr-doped V2O3 thin films
Published Date
Sep 14, 2015
Journal
Volume
107
Issue
11
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