J.-P. Locquet
Katholieke Universiteit Leuven
Hubbard modelSemiconductorEpitaxyIrradiationAnalytical chemistryJoule heatingPhase (waves)OpticsPhysicsDeposition (law)CancerProof of conceptNéel temperatureLattice (order)Mott insulatorNova (laser)Energy filtered transmission electron microscopyTransmission electron microscopyElectronCurrent (fluid)RadiationAntiferromagnetismNanoparticleStrongly correlated materialPhotonVoltageNanotechnologyAuger effectTransistorMagnetic structureMagnetic domainAtomic physicsChemistryScanning confocal electron microscopyThin filmMaterials scienceScanning transmission electron microscopyMonte Carlo methodMagnetismThermalScanning electron microscopeCondensed matter physicsSurface (mathematics)Dirac (software)OvalbuminQuantum anomalous Hall effectBrachytherapyMesoporous silicaOrders of magnitude (specific energy)State (functional analysis)Layer (electronics)TrisilanePhotoemission electron microscopyAluminium oxidesVanadium CompoundsResistive switchingNuclear medicineDose distributionCr dopedSpectroscopyMagnetic anisotropyTheoretical physicsPassivationMolecular beam epitaxyMolecular physicsSpectral lineOptoelectronicsCollapse (topology)Radiation therapyChromiumLaserDark field microscopySiliconDopingNucleationMonoclinic crystal systemCurie temperatureRealization (systems)Atomic layer depositionElectrical resistivity and conductivityMedicineDosimetrySemiconductor deviceFerromagnetismExcitationAnisotropyElectron microscopeExchange bias
14Publications
4H-index
31Citations
Publications 14
Newest
#1Simon Mellaerts (Katholieke Universiteit Leuven)H-Index: 1
#2Ruishen MengH-Index: 5
Last. J.-P. Locquet (Katholieke Universiteit Leuven)H-Index: 4
view all 6 authors...
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Curie temperature. One promising subgroup of 2D magnetic systems are Dirac half-metals (DHM) which have gained a lot of interest recently, as they host a high-temperature quantum anomalous Hall effect (QAHE). This article discusses predictions for intrinsic DHMs and identifies them as realizations of the Kane-Mele Hubbar...
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#1Andrea Ronchi (Katholieke Universiteit Leuven)H-Index: 4
#2Paolo Franceschini (Katholieke Universiteit Leuven)H-Index: 4
Last. Claudio Giannetti (UCSC: Catholic University of the Sacred Heart)H-Index: 24
view all 10 authors...
The insulator-to-metal transition in Mott insulators is the key mechanism for most of the electronic devices belonging to the Mottronics family. Intense research efforts are currently devoted to the development of specific control protocols, usually based on the application of voltage, strain, pressure, and light excitation. The ultimate goal is to achieve the complete control of the electronic phase transformation, with dramatic impact on the performance, for example, of resistive-switching dev...
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#1Stephanie Seré (Katholieke Universiteit Leuven)H-Index: 2
#2Ilse Lenaerts (Katholieke Universiteit Leuven)H-Index: 12
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#1Andrea RonchiH-Index: 4
#2Pia HommH-Index: 8
Last. Claudio GiannettiH-Index: 24
view all 13 authors...
Unveiling the physics that governs the intertwining between the nanoscale self-organization and the dynamics of insulator-to-metal transitions (\textit{IMT}) is key for controlling on demand the ultrafast switching in strongly correlated materials and nano-devices. A paradigmatic case is the \textit{IMT} in V_2_3 for which the mechanism that leads to the nucleation and growth of metallic nano-droplets out of the supposedly homogeneous Mott insulating phase is still a mystery. Here, we comb...
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#1Mariela MenghiniH-Index: 18
#2Pia HommH-Index: 8
Last. J.-P. LocquetH-Index: 4
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#1Pia HommH-Index: 8
#2Leander DillemansH-Index: 9
Last. J.-P. LocquetH-Index: 4
view all 13 authors...
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#1Pia Homm (Katholieke Universiteit Leuven)H-Index: 8
#2Leander Dillemans (Katholieke Universiteit Leuven)H-Index: 9
Last. J.-P. Locquet (Katholieke Universiteit Leuven)H-Index: 4
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We have grown epitaxial Cr-doped V2O3 thin films with Cr concentrations between 0% and 20% on (0001)-Al2O3 by oxygen-assisted molecular beam epitaxy. For the highly doped samples (>3%), a regular and monotonous increase of the resistance with decreasing temperature is measured. Strikingly, in the low doping samples (between 1% and 3%), a collapse of the insulating state is observed with a reduction of the low temperature resistivity by up to 5 orders of magnitude. A vacuum annealing at high temp...
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#1Maarten K. Vanbel (Katholieke Universiteit Leuven)H-Index: 8
#2Ventsislav K. Valev (Katholieke Universiteit Leuven)H-Index: 29
Last. Thierry Verbiest (Katholieke Universiteit Leuven)H-Index: 65
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Monitoring oxidation steps is an important factor during the fabrication of semiconductor devices, because transistor performance can be greatly affected by defects in the passivation layer. As an example, we discuss the formation of a gate stack in metal oxide semiconductor (MOS) devices using Ge as an alternative channel material. Building an MOS gate stack on Ge requires passivation of the interface between the dielectric (typically a high-k material such as Al2O3 or HfO2, grown by means of a...
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#1F Van den Heuvel (Katholieke Universiteit Leuven)H-Index: 4
#2M Seo (Katholieke Universiteit Leuven)
Last. J.-P. Locquet (Katholieke Universiteit Leuven)H-Index: 4
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Purpose: The use of high‐Z nano‐particles (NP) increases the dose in the nearby volume by absorbing more photons of keV energy. The resulting electrons deposit the dose locally. Additionally, Auger electrons are generated. In combination with tumor specific agents such a dose deposition mechanism could provide an efficient methodology to increase dose to microscopic disease. To quantify dose enhancement and spectral changes in the vicinity of these particles we propose the use of GaF‐chromic fil...
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#1F. Van den HeuvelH-Index: 7
#2G. De KerfH-Index: 1
Last. J.-P. LocquetH-Index: 4
view all 7 authors...
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