Fluence effect on photo- and electroluminescence of silica layers implanted with Sn+ ions

High-fluence ion implantation has been applied to create silica-based light-emitting nanocomposite for silicon photonics. Samples of SiO2/Si have been implanted with Sn ions (80 keV, 2.5 × 1016 cm−2, 5 × 1016 cm−2 and 1 × 1017 ion/cm2) and afterwards annealed at 900 °C for 60 min in air ambient. The intense violet band at 3.2 eV dominates in photoluminescence (PL) end electroluminescence (EL) spectra. Its intensity decreases with the Sn...