Radiation-Induced Junction-Leakage Random-Telegraph-Signal

This article studies the radiation effects on the junction leakage random telegraph signal (JL-RTS). Using arrays of transistors, a statistical study of the phenomenon in MOSFETs source p-n junctions is performed and the impact of the electric field, the type of irradiation, and the source design is investigated. It appears that although JL-RTS originates both from the displacement damage dose (DDD)- and total ionizing dose (TID)-induced...