The paper studies the radiation effects on the junction leakage random telegraph signal (JL-RTS). Using arrays of transistors, a statistical study of the phenomenon in MOSFETs source p-n junctions is performed and the impact of the electric field, the type of irradiation, and the source design is investigated. It appears that although JL-RTS originate both from the DDD- and TID-induced defects, the latter is the dominant contribution in MOSFETs sources due to an electric field enhancement. The p...
#2Ryoji Kosugi(AIST: National Institute of Advanced Industrial Science and Technology)H-Index: 13
Last. Yasunori Tanaka(AIST: National Institute of Advanced Industrial Science and Technology)H-Index: 16
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We report on SiC pn-junction diodes with a high blocking voltage over 3 kV. Although SiC radiation sensors have been developed with a Schottky barrier type due to a simple fabrication process in the early stages, pn junction structures are advantageous due to lower sensitivity of the surface defects. Thus, this system provides an ideal condition to investigate the effect of bulk crystal defects on the characteristics of the radiation sensor. The pn diodes were designed with a device simulator an...
X-ray computed laminography (CL), as a popular nondestructive testing technology, has unique advantages for the detection of plate-type structures. However, with the limitation of the detector size, the specimen, i.e., large flat-like components, may be beyond the field of view (FOV) of the CL system. For the cone-beam computed tomography (CBCT) system, which is analogous to the CL system, a traditional way to enlarge the FOV is the displaced sample stage scanning mode. In this article, a new CL...
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