High efficiency InGaN nanowire tunnel junction green micro-LEDs
Abstract
We report on the study of InGaN nanowire green light emitting diodes (LEDs) with lateral dimensions varying from ∼1 to 10 μm. For a device with an areal size ∼3 × 3 μm2, a maximum external quantum efficiency ∼5.5% was directly measured on wafer without any packaging. The efficiency peaks at ∼3.4 A/cm2 and exhibits ∼30% drop at an injection current density ∼28 A/cm2. Detailed analysis further suggests that a maximum external quantum efficiency in...
Paper Details
Title
High efficiency InGaN nanowire tunnel junction green micro-LEDs
Published Date
Oct 4, 2021
Journal
Volume
119
Issue
14
Citation AnalysisPro
You’ll need to upgrade your plan to Pro
Looking to understand the true influence of a researcher’s work across journals & affiliations?
- Scinapse’s Top 10 Citation Journals & Affiliations graph reveals the quality and authenticity of citations received by a paper.
- Discover whether citations have been inflated due to self-citations, or if citations include institutional bias.
Notes
History