Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors

Volume: 12, Issue: 1
Published: Jul 22, 2021
Abstract
Spin defects in solid-state materials are strong candidate systems for quantum information technology and sensing applications. Here we explore in details the recently discovered negatively charged boron vacancies (V B − ) in hexagonal boron nitride (hBN) and demonstrate their use as atomic scale sensors for temperature, magnetic fields and externally applied pressure. These applications are possible due to the high-spin triplet ground state and...
Paper Details
Title
Spin defects in hBN as promising temperature, pressure and magnetic field quantum sensors
Published Date
Jul 22, 2021
Volume
12
Issue
1
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