An Analytical Model for Dual Gate Piezoelectrically Sensitive ZnO Thin Film Transistors

Highly sensitive force sensors of piezoelectric zinc oxide (ZnO) dual‐gate thin film transistors (TFTs) are reported together with an analytical model that elucidates the physical origins of their response. The dual‐gate TFTs are fabricated on a polyimide substrate and exhibited a field effect mobility of ≈5 cm 2 V −1 s −1 , I max / I min ratio of 10 7 , and a subthreshold slope of 700 mV dec −1 , and demonstrated static and transient current...