Characterization of radical-enhanced atomic layer deposition process based on microwave surface wave generated plasma

A plasma-assisted atomic layer deposition system employing a microwave surfatron plasma was developed and characterized by spatially resolved Langmuir probe diagnostics and optical emission spectroscopy. The deposition process was applied on TiO2 thin films prepared on Si wafers. The surfatron is equipped with a small ring electrode serving as a source of weak radio frequency plasma helping with fast and reliable ignition of the discharge in...