Nb-doped ZrxSn1−xO2: Experimental and first-principles study

Ultra-wide bandgap semiconductors with exceptional advantages have potential use in ultrahigh power, ultrahigh frequency devices, and other applications. In this paper, a series of high-quality Nb-doped ZrxSn1−xO2 (Nb:ZrxSn1−xO2) alloy epitaxial films were prepared on c-plane sapphire substrates by pulsed laser deposition. A greater proportion of Zr successfully widened the optical bandgap of SnO2 up to 4.70 from 4.28 eV. Interestingly, although...