Pani Addition to Improve Contact Between CdTe/CdS Semiconductors

Published on May 31, 2021in Materials Research-ibero-american Journal of Materials1.468
· DOI :10.1590/1980-5373-MR-2020-0464
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Abstract
This paper presents the study of the addition of the polyaniline polymer (PANI), at the junction of the cadmium telluride and cadmium sulfide (CdTe/CdS) layers in order to improve the contact between the layers, to decrease the air gap that limit the conversion photovoltaic. The morphology of CdS, CdTe and polyaniline (PANI) were characterized with multiple techniques including scanning electron microscopy (SEM), energy dispersive spectroscopy (EDS), X-ray diffraction (XRD) and optical absorption. The Metrohm Autolab LED Driver Kit system was used for data collection, and it was possible to obtain the current and voltage parameters of the cells. The inclusion of PANI thin film in CdS/CdTe hybrid solar cells increases the energy conversion efficiency from 0.0075% to 0.15%, this gives a 20-fold increase in efficiency.
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A eletrodeposicao tem sido empregada para a obtencao de materiais semicondutores; todavia, ainda nao estao bem esclarecidos os mecanismos envolvidos neste processo. Neste sentido, este trabalho apresenta a investigacao deste processo, evidenciando a caracterizacao do CdTe eletrodepositado sobre substrato platina em solucao acida. A deposicao ocorre a partir de 0,0 V, em relacao ao eletrodo Ag/AgCl,KClsat, com etapas de controle ativado e de difusao. Os filmes finos de CdTe foram eletrodepositado...
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The equimolar concentration thin films of Cadmium Sulfide (CdxSx) with the complexing agent TEA were deposited on a glass substrate by the SILAR technique. The crystalline nature with face centered cubic crystal system of the CdS films is determined from X-ray diffraction analysis. The broadened diffraction peaks indicated nano sized particles of the film materials. The surface morphology of the films was studied by SEM analysis. The Energy Dispersive Analysis of X-ray (EDAX) plot confirms the e...
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Abstract Cadmium Sulphide (CdS) is an important n-type semiconductor widely used as a window layer in thin film photovoltaics Copper Indium Selenide, Copper Indium Gallium (di)Selenide, Copper Zinc Tin Sulphide and Cadmium Telluride (CdTe). Cadmium Sulphide has been deposited using a number of techniques but these techniques can be slow (chemical bath deposition and Radio Frequency sputtering) or the uniformity and the control of thickness can be relatively difficult (close space sublimation). I...
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Abstract Good stoichiometric CdS films are fabricated using the successive ionic layer adsorption and reaction (SILAR) technique. Several sets of films are prepared by keeping the number of cycles of immersion as 25, 50, 75 and 100 and the effects of number of immersion cycles on the stoichiometry together with their optical and structural properties are studied. The X-ray diffraction studies showed that the films prepared from 100 cycles exhibited good crystallinity. The optical investigations ...
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#1Junfeng Han (PKU: Peking University)H-Index: 16
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Abstract CdS layers grown by chemical bath deposition (CBD) are treated in different ways to improve the performance of CdS/CdTe solar cells. It has been found that the open circuit voltage of the CdS/CdTe solar cell increases when the CBD CdS is annealed with CdCl 2 before the deposition of CdTe by close spaced sublimation (CSS). A thin CBD CdS (∼80 nm) with bi-layer structure can significantly improve the short circuit current of the CdS/CdTe solar cells.
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