The removal mechanism and force modelling of gallium oxide single crystal in single grit grinding and nanoscratching

Volume: 204, Pages: 106562 - 106562
Published: Aug 1, 2021
Abstract
Gallium oxide (Ga2O3) single crystals are an ultrawide bandgap semiconductor with wide industrial applications. Ultra-precision grinding is an essential shaping process in the fabrication of high quality Ga2O3 substrates. However, due to the lack of understanding of their removal mechanism, the development of high efficiency and low-damage grinding technology for Ga2O3 substrates faces great challenges. In this work, the removal mechanism of...
Paper Details
Title
The removal mechanism and force modelling of gallium oxide single crystal in single grit grinding and nanoscratching
Published Date
Aug 1, 2021
Volume
204
Pages
106562 - 106562
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