Dislocation Etching Morphology on the A Plane of Sapphire Crystal

In this work, the dislocation etching pit morphology and etching kinetics on the A ‐{110} plane of sapphire crystal (α‐Al 2 O 3 ) are studied experimentally. The results show that the etch pit exhibits a subrhombic 3D morphology, which is consistent with the atom arrangement symmetry of the A plane. Further analysis shows that the two adjacent sides of the rhombic etch pits correspond to the directions [30] and [302], respectively; both of them...