Bi doping stimulation on the visible-light absorption of In2O3 ceramics

Bandgap engineering in semiconductors is a long-term subject in many interests. Doping Bi modifies the wide-bandgap semiconductor In2O3 by generating an in-gap state. The reflectance spectra show that an optical transition occurs at 1.2 eV inside the bandgap of In2O3 as a substitution of Bi atoms, which is in good agreement with the previously reported density functional theory (DFT) calculation by Sabino et al., Phys. Rev. Mater. 3 (2019)...