Carrier localization in perovskite nickelates from oxygen vacancies

Volume: 116, Issue: 44, Pages: 21992 - 21997
Published: Oct 14, 2019
Abstract
Point defects, such as oxygen vacancies, control the physical properties of complex oxides, relevant in active areas of research from superconductivity to resistive memory to catalysis. In most oxide semiconductors, electrons that are associated with oxygen vacancies occupy the conduction band, leading to an increase in the electrical conductivity. Here we demonstrate, in contrast, that in the correlated-electron perovskite rare-earth...
Paper Details
Title
Carrier localization in perovskite nickelates from oxygen vacancies
Published Date
Oct 14, 2019
Volume
116
Issue
44
Pages
21992 - 21997
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