Original paper
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
Abstract
Scalable quantum networking requires quantum systems with quantum processing capabilities. Solid state spin systems with reliable spin–optical interfaces are a leading hardware in this regard. However, available systems suffer from large electron–phonon interaction or fast spin dephasing. Here, we demonstrate that the negatively charged silicon-vacancy centre in silicon carbide is immune to both drawbacks. Thanks to its 4 A 2 symmetry in ground...
Paper Details
Title
High-fidelity spin and optical control of single silicon-vacancy centres in silicon carbide
Published Date
Apr 26, 2019
Journal
Volume
10
Issue
1
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Notes
History