One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy
Abstract
Two-dimensional heterojunctions of transition-metal dichalcogenides have great potential for application in low-power, high-performance and flexible electro-optical devices, such as tunnelling transistors, light-emitting diodes, photodetectors and photovoltaic cells. Although complex heterostructures have been fabricated via the van der Waals stacking of different two-dimensional materials, the in situ fabrication of high-quality lateral...
Paper Details
Title
One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy
Published Date
Jan 1, 2018
Journal
Volume
553
Issue
7686
Pages
63 - 67
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