Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing

Science56.90
Volume: 358, Issue: 6369, Pages: 1423 - 1427
Published: Dec 15, 2017
Abstract
Fast phase change with no preconditions Random access memory (RAM) devices that rely on phase changes are primarily limited by the speed of crystallization. Rao et al. combined theory with a simple set of selection criteria to isolate a scandium-doped antimony telluride (SST) with a subnanosecond crystallization speed (see the Perspective by Akola and Jones). They synthesized SST and constructed a RAM device with a 700-picosecond writing speed....
Paper Details
Title
Reducing the stochasticity of crystal nucleation to enable subnanosecond memory writing
Published Date
Dec 15, 2017
Journal
Volume
358
Issue
6369
Pages
1423 - 1427
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