Predicting SiC MOSFET Behavior Under Hard-Switching, Soft-Switching, and False Turn-On Conditions

Circuit-level analytical models for hard-switching, soft-switching, and dv/ dt/tex-math> -induced false turn on of SiC MOSFETs and their experimental validation are described. The models include the high-frequency parasitic components in the circuit and enable fast, accurate simulation of the...