Engineering

Fabrication

Microelectromechanical systems

Materials science

Return loss

RF switch

Optical switch

HFSS

Radio frequency

Antenna (radio)

Silicon

Substrate (aquarium)

Geology

Oceanography

Alternative medicine

Insertion loss

Medicine

Microstrip antenna

Optoelectronics

Electrical engineering

Crossover switch

Pathology

This work presents the design, simulation, and fabrication of a 500-750 GHz RF MEMS switch. The switch is designed on a high-resistivity silicon substrate using CPW. Electrostatic force generated by DC bias can actuate the beam to realize conduction or isolation between input and output CPW. HFSS simulations demonstrate that the switch's isolation is 14 dB at 620 GHz and 12 dB at 750 GHz in the OFF state. In the ON state, the insertion loss is approximately 2.5 dB, and at 750 GHz it drops to around 3.5 dB. At the same time, the return loss stays above 15 dB, which presents a good match between the input and output CPW lines. In this paper, low frequency and high frequency switch models are provided. Fabricated device is shown in pictures with details. The fabricated device is currently under measurement and will be presented at the conference.

Electrostatic RF MEMS switch working on 500–750 GHz