Computational intelligence method of determining the energy band gap of doped ZnO semiconductor

Volume: 101, Pages: 277 - 284
Published: Jul 1, 2016
Abstract
Presence of a direct wide band gap and large exciton binding energy in ZnO contributes enormously to its diverse practical applications such as transparent electrodes in solar cells and guide electron devices to mention a few. Doping has been recognized as an effective way of improving the intrinsic defects associated with pure ZnO and further serves as a way of controlling the band gap of ZnO for specific application of interest. Since the...
Paper Details
Title
Computational intelligence method of determining the energy band gap of doped ZnO semiconductor
Published Date
Jul 1, 2016
Volume
101
Pages
277 - 284
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