Current–voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination

Volume: 61, Issue: 1, Pages: 116 - 120
Published: Jul 1, 2011
Abstract
In this study, the current–voltage characteristics of the AlCdO/unpolished p-type Si and AlCdO/polished p-type Si Schottky diodes with and without light illumination were examined. It is found that the Schottky barrier height (the series resistance) of the AlCdO/unpolished p-type Si Schottky diode is higher (lower) than that of the AlCdO/polished p-type Si Schottky diode. The power conversion efficiency of the AlCdO/p-type Si devices in the...
Paper Details
Title
Current–voltage characteristics of AlCdO Schottky contact on the polished and unpolished p-type Si surfaces with and without light illumination
Published Date
Jul 1, 2011
Volume
61
Issue
1
Pages
116 - 120
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