Yow-Jon Lin
National Changhua University of Education
Electron mobilityIrradiationWork functionAnalytical chemistryConductivityThermionic emissionSchottky barrierPEDOT:PSSX-ray photoelectron spectroscopyWide-bandgap semiconductorThin filmMaterials scienceSchottky diodeCondensed matter physicsPentaceneGrapheneIndium tin oxideOptoelectronicsDopingDiodeHeterojunctionPhotoluminescence
216Publications
28H-index
2,392Citations
Publications 226
Newest
#1Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
#2Jing-Shiuan Huang (NCUE: National Changhua University of Education)
Last. Meng-Hsun Lin (NCUE: National Changhua University of Education)
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Abstract null null This study determines the effect of the addition of graphene on the photoluminescent and electrical properties of ZnO films that are prepared using the sol-gel method. ZnO and graphene-doped ZnO thin films that are annealed at 500 °C for 30 min in nitrogen exhibit n-type conductivity. The correlation between photoluminescence (PL) spectral features and defects of ZnO means that there are oxygen vacancies (VO), zinc vacancies (VZn) and oxygen interstitials (Oi) in a ZnO thin fi...
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#1Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
#2Hsing-Cheng Chang (FCU: Feng Chia University)H-Index: 16
Last. Jing-Shiuan Huang (NCUE: National Changhua University of Education)
view all 5 authors...
Abstract null null This study determines the effect of the addition of graphene on the electrical and ferromagnetic properties of the ZnO thin films that are prepared by the sol-gel method. ZnO is a typically oxygen-deficient metal oxide and exhibits intrinsic n-type conductivity. ZnO thin films to which graphene is added and those to which it is not, which are annealed at 500 °C for 30 min in oxygen, exhibit p-type behavior. There is an increase in the hole concentration of the graphene-doped Z...
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#1Yow-Jon LinH-Index: 28
#2Ting Hong SuH-Index: 6
Last. Hsing-Cheng ChangH-Index: 16
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#1Ting Hong Su (NCUE: National Changhua University of Education)
#2Ming-Yang Chen (NCUE: National Changhua University of Education)
Last. Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
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This study determines the effect of incorporating black phosphorus (BP) nanosheets into poly(methyl methacrylate) (PMMA) on resistive switching (RS) mechanisms using the temperature-dependent current–voltage characteristics of gold/PMMA:BP/heavily doped p-type Si (p+-Si)/indium devices. A gold/PMMA:BP/p+-Si/indium device exhibits RS behavior, but a gold/PMMA/p+-Si/indium device exhibits set/reset–free current–voltage characteristics. The current in gold/PMMA:BP/p+-Si/indium devices is limited by...
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#2Yow-Jon LinH-Index: 28
Last. Hsing-Cheng ChangH-Index: 16
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This study determines the effect of incorporating polyvinyl alcohol (PVA) into ZrO2 (PVA:ZrO2) on the hysteresis-type current–voltage characteristics of Au/ZrO2/heavily doped p-type Si (p+-Si) devices. In order to determine the correlation between morphology and performance, the Au/ZrO2/p+-Si and Au/PVA:ZrO2/p+-Si devices are fabricated and their current–voltage characteristics are determined. These devices exhibit hysteresis. Incorporating PVA into ZrO2 induces a strong steric effect, which res...
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#1Nian Hao Yan (NCUE: National Changhua University of Education)H-Index: 1
#2Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
Last. Hsing-Cheng Chang (FCU: Feng Chia University)H-Index: 16
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The optical and structural properties of ZnO nanorods that are modified using $\hbox {H}_2\text {O}_2 and used as the conductive filament (CF) for poly(methyl methacrylate) (PMMA)-based resistive switching (Rs) applications are studied. ZnO nanorods are used as the CF for a PMMA-based Rs device, to determine their specific properties and to determine the effect of oxygen vacancies on the Rs performance in ZnO. The Rs performance for PMMA-based devices is affected by treatment with \hbox {H}...
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#1Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
#2Chang Lin Wu (NCUE: National Changhua University of Education)H-Index: 1
Last. Hsing-Cheng Chang (FCU: Feng Chia University)H-Index: 16
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This study determines the effect of incorporating reduced graphene oxide (RGO) nanosheets into poly(methyl methacrylate) (PMMA) on the resistive switching (RS) mechanisms by measuring the current–voltage characteristics for Au/PMMA/heavily doped p-type Si (p+-Si) and Au/PMMA:RGO/p+-Si devices. The effect of RGO content on the RS properties is also determined. The Au/PMMA/p+-Si device exhibits set/reset–free current–voltage characteristics because of the insulating properties of PMMA. However, th...
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#1Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
#2Chang Lin Wu (NCUE: National Changhua University of Education)H-Index: 1
Last. Po Chih Kuo (NCUE: National Changhua University of Education)H-Index: 1
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The leakage conduction mechanisms for top-contact and bottom-contact pentacene-based organic thin film transistors (OTFTs) are studied. OTFTs that use a bottom-contact design exhibit lower leakage conduction than those that use a top-contact design. For top-contact OTFTs, the dominant leakage conduction mechanism is via Schottky emission and the density of the leakage current increases significantly as the bias voltage increases. For bottom-contact OTFTs, the dominant leakage conduction mechanis...
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#1Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
#2Chang Lin Wu (NCUE: National Changhua University of Education)H-Index: 1
Last. Hsing-Cheng Chang (FCU: Feng Chia University)H-Index: 16
view all 3 authors...
The electrochemical properties and trap states of TiO2 nanoparticles that are modified by doping with graphene (Gr) and used as counter electrodes (CEs) for dye-sensitized solar cell (DSSC) applications are studied. This research demonstrates the operation of a DSSC that features a TiO2 CE, with or without the addition of Gr. TiO2 nanoparticles are used as the CE for a DSSC to determine their specific properties and to determine the effect of trap states in TiO2 on the photovoltaic performance. ...
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#1Yow-Jon Lin (NCUE: National Changhua University of Education)H-Index: 28
#2Cheng Chun Hung (NCUE: National Changhua University of Education)H-Index: 3
Last. Hsing-Cheng Chang (FCU: Feng Chia University)H-Index: 16
view all 5 authors...
Abstract The effect of ultraviolet (UV) treatment on the electrical and surface properties of SiO2 is studied. UV treatment leads to the formation of the silicon peroxide in SiO2 near the surface, thus increasing the capacitance of SiO2. The effect of SiO2 gate dielectrics with UV treatment on carrier transport for a pentacene-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards positive gate-source voltag...
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