Original paper
Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures
Abstract
In this work, magnetoresistance of as-grown and annealed n- and p-type modulation-doped Ga0.68In0.32NyAs1−y/GaAs single quantum well structures with various nitrogen concentrations has been studied. At low temperatures and low magnetic fields, in n-type samples negative and in p-type samples positive, magnetoresistance has been observed. The observed negative magnetoresistance in n-type samples is an indication of enhanced backscattering of...
Paper Details
Title
Negative and positive magnetoresistance in GaInNAs/GaAs modulation-doped quantum well structures
Published Date
Nov 8, 2014
Journal
Volume
118
Issue
3
Pages
823 - 829
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Notes
History