Physics

Organic chemistry

Relaxation (psychology)

Crystallography

Analytical Chemistry (journal)

Optics

Quenching (fluorescence)

Perovskite (structure)

Psychology

Photoluminescence excitation

Quantum yield

Halide

Light-emitting diode

Inorganic chemistry

Chemistry

Materials science

Photoluminescence

Chromatography

Optoelectronics

Doping

Photochemistry

Social psychology

Fluorescence

Laser & Photonics Review

Rare‐earth ion‐doped halide perovskite materials have attracted considerable attention owing to their outstanding electrical and optical characteristics. However, the heavy doping of activating rare‐earth ions causes severe cross‐relaxation and photoluminescence intensity quenching. Herein, the challenge of designing highly efficient emission and antithermal quenching Er 3+ /Yb 3+ ‐based halide double perovskite single crystals based on abnormal heavy activator doping without severe concentration quenching is addressed. Cross‐relaxation is proposed as a possible mechanism. Upon Yb 3+ substitution, the visible and near‐infrared (NIR) emission peaks at 664 and 995 nm are greatly enhanced, and the photoluminescence quantum yield of optimized Cs 2 NaEr 0.4 Yb 0.6 Cl 6 is 62% under 379 nm ultraviolet excitation. More importantly, the cross‐relaxation between Er 3+ and Yb 3+ is verified. The cross‐relaxation enhances the downshifting emission and causes the visible and NIR emissions to exhibit a wide range of antithermal quenching photoluminescence behaviors. The as‐prepared halide double perovskites demonstrate great potential for light‐emitting diode applications in advanced night vision technology and nondestructive examination.

Er<sup>3+</sup>/Yb<sup>3+</sup>‐Based Halide Double Perovskites with Highly Efficient and Wide Ranging Antithermal Quenching Photoluminescence Behavior for Light‐Emitting Diode Applications

Er3+/Yb3+‐Based Halide Double Perovskites with Highly Efficient and Wide Ranging Antithermal Quenching Photoluminescence Behavior for Light‐Emitting Diode Applications

Er³⁺/Yb³⁺‐Based Halide Double Perovskites with Highly Efficient and Wide Ranging Antithermal Quenching Photoluminescence Behavior for Light‐Emitting Diode Applications