Silicon carbide

Quantum mechanics

Voltage

Engineering

Capacitance

Metallurgy

Materials science

Layer (electronics)

Gallium nitride

Power MOSFET

Power (physics)

Power semiconductor device

Transistor

Physics

Nanotechnology

Electronic engineering

Electronics

Electrode

Power electronics

Optoelectronics

Electrical engineering

MOSFET

Engineering physics

Energies

This work presents a comparative analysis among four power MOSFET technologies: conventional Silicon (Si), Superjunction (SJ), Silicon Carbide (SiC) and Gallium Nitride (GaN), indicating the voltage, current and frequency ranges of the best performance for each technology. For this, a database with 91 power MOSFETs from different manufacturers was built. MOSFET losses are related to individual characteristics of the technology: drain-source on-state resistance, input capacitance, Miller capacitance and internal gate resistance. The total losses are evaluated considering a drain-source voltage of 400 V, power levels from 1 kW to 16 kW (1 A–40 A) and frequencies from 1 kHz to 500 kHz. A methodology for selecting power MOSFETs in power electronics applications is also presented.

An Overview about Si, Superjunction, SiC and GaN Power MOSFET Technologies in Power Electronics Applications