Electronics

Metallurgy

Materials science

Optoelectronics

Engineering

Transistor

Nanotechnology

Wafer

Molybdenum disulfide

Chemical vapor deposition

Voltage

Graphene

Electrical engineering

Fabrication

Pathology

Alternative medicine

Layer (electronics)

Medicine

Thin-film transistor

Nature

Ultra-scaled transistors are of interest in the development of next-generation electronic devices1–3. Although atomically thin molybdenum disulfide (MoS2) transistors have been reported4, the fabrication of devices with gate lengths below 1 nm has been challenging5. Here we demonstrate side-wall MoS2 transistors with an atomically thin channel and a physical&nbsp;gate length of sub-1 nm using the edge of a graphene layer as the gate electrode. The approach uses large-area graphene and MoS2 films grown by chemical vapour deposition for the fabrication of side-wall transistors on a 2-inch wafer. These devices have On/Off ratios up to 1.02 × 105 and subthreshold swing values down to 117 mV dec–1. Simulation results indicate that the MoS2 side-wall effective channel length approaches 0.34 nm in the On state and 4.54 nm in the Off state. This work can promote Moore’s law of the scaling down of transistors for next-generation electronics. Ultra-scaled transistors based on two-dimensional MoS2 with physical&nbsp;gate lengths of 0.34 nm are reported, which show relatively good electrical characteristics and can be switched off.

Vertical MoS2 transistors with sub-1-nm gate lengths