Original paper
Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction
Abstract
A requirement for quantum information processors is the in situ tunability of the tunnel rates and the exchange interaction energy within the device. The large energy level separation for atom qubits in silicon is well suited for qubit operation but limits device tunability using in-plane gate architectures, requiring vertically separated top-gates to control tunnelling within the device. In this paper, we address control of the simplest...
Paper Details
Title
Monolithic Three-Dimensional Tuning of an Atomically Defined Silicon Tunnel Junction
Published Date
Nov 19, 2021
Journal
Volume
21
Issue
23
Pages
10092 - 10098
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Notes
History