A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
Abstract
We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near...
Paper Details
Title
A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems
Published Date
Nov 17, 2021
Journal
Volume
10
Issue
22
Pages
2822 - 2822
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