Electrical and optical artificial synapses properties of TiN-nanoparticles incorporated HfAlO-alloy based memristor

Resistive switching behavior of sandwiched HfAlO/TiN-NP/HfAlO switching layer demonstrated in this work. Stable 103 DC switching cycles achieved after incorporation of TiN-NPs, which were partially oxidized to form TiOxNy confirmed by X-ray photoelectron spectroscopy. The experiment predicted that TiOxNy/HfAlO interface acts as a weak spot and facilitated the rapture and formation of the conductive filaments. Also, gradual switching behavior...