Defect levels in high energy heavy ion implanted 4H-SiC

Present work investigates defect levels in Ni/4H-SiC Schottky diode implanted with 200 MeV Ag14+ ions at a fluence of 1×1012 ions/cm2, employing deep level transient spectroscopic technique. In pristine diode, two defect levels below conduction minimum, i.e., Ec-0.10 eV and Ec-0.24 eV are found which are attributed to nitrogen impurity and carbon interstitial related effects. However, after ion implantation, five defects, i.e., Ec-0.14, Ec-0.15,...