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doi.org/10.1016/j.matlet.2021.131150
Defect levels in high energy heavy ion implanted 4H-SiC
Vibhor Kumar
18
,
A.S. Maan
25
,
Jamil Akhtar
19
View all 3 authors
Materials Letters
2.70
Volume: 308, Pages: 131150 - 131150
Published
: Oct 28, 2021
15
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Paper Fields
Physics
Organic chemistry
Fluence
Analytical Chemistry (journal)
Composite number
Carbon fibers
Ion
Atomic physics
Composite material
Schottky diode
Chemistry
Materials science
Diode
Ion implantation
Chromatography
Optoelectronics
Impurity
Paper Details
Title
Defect levels in high energy heavy ion implanted 4H-SiC
DOI
doi.org/10.1016/j.matlet.2021.131150
Published Date
Oct 28, 2021
Journal
Materials Letters
Volume
308
Pages
131150 - 131150
Notes
History
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