Controllable growth of 2H-1 T′ MoS2/ReS2 heterostructures via chemical vapor deposition

Two-dimensional (2D) 2H-1 T′ heterojunctions based on transition-metal dichalcogenides have attracted great attention due to their special interface structures and novel properties. Understanding the growth mechanism and the interface structures is essential for their controllable growth. In this work, we successfully synthesize lateral and vertical MoS2/ReS2 heterojunctions by using a two-step chemical vapor deposition (CVD) method, and deeply...