Review paper
Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview
Volume: 10, Issue: 1, Pages: 1232 - 1254
Published: Sep 6, 2021
Abstract
Accelerated lifetime tests (ALTs) play a critical role in long-term reliability studies of SiC MOSFETs, including lifetime estimation, failure analysis, and condition monitoring. This article presents a comprehensive review of state-of-the-art ALTs circuits, operating principles, and induced failure modes for SiC MOSFETs. First, the weak spots and corresponding aging mechanisms in both device chip and package are summarized. Next, based on the...
Paper Details
Title
Aging Mechanisms and Accelerated Lifetime Tests for SiC MOSFETs: An Overview
Published Date
Sep 6, 2021
Volume
10
Issue
1
Pages
1232 - 1254