Original paper

Unraveling the origin of local variations in the step resistance of epitaxial graphene on SiC: a quantitative scanning tunneling potentiometry study

Carbon10.50
Volume: 184, Pages: 463 - 469
Published: Oct 1, 2021
Abstract
By combining highly resolved Scanning Tunneling Potentiometry with the exceptional sample homogeneity of graphene on SiC epitaxially grown by polymer-assisted sublimation growth, we reveal local variations in the resistance associated with substrate steps. We quantify these variations and show that they are an intrinsic property of graphene on SiC. Furthermore, we trace back their origin to variations in the electronic structure of the interface...
Paper Details
Title
Unraveling the origin of local variations in the step resistance of epitaxial graphene on SiC: a quantitative scanning tunneling potentiometry study
Published Date
Oct 1, 2021
Journal
Volume
184
Pages
463 - 469
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