Realizing fast photoinduced recovery with polyfluorene‐ block ‐poly (vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices

Volume: 60, Issue: 3, Pages: 525 - 537
Published: Aug 17, 2021
Abstract
Photonic field‐effect transistor (FET) memory devices offer unique advantages owing to their solution processability, low cost production, and their lightweight and structural flexibility. Despite the plethora of research demonstrated the photon based programming process, limited reports are available for photoinduced recovery mechanism in such devices. To investigate the influence of polymer electret design on photonic memory performance,...
Paper Details
Title
Realizing fast photoinduced recovery with polyfluorene‐ block ‐poly (vinylphenyl oxadiazole) block copolymers as electret in photonic transistor memory devices
Published Date
Aug 17, 2021
Volume
60
Issue
3
Pages
525 - 537
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