Original paper
Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure
Abstract
In this paper, a position-sensitive detector (PSD) with an enhanced position detection performance has been proposed using graphene-silicon-on-insulator (GSOI) structure. By introducing the gate manipulation, the separation efficiency and diffusion speed of the photo-induced charges have been greatly improved. We experimentally observe a 10-fold increase in the generated photocurrent and the response time is shorten by around 8 times, compared...
Paper Details
Title
Gate modulation enhanced position-sensitive detectors using graphene/silicon-on-insulator structure
Published Date
Oct 1, 2021
Journal
Volume
184
Pages
445 - 451
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Notes
History