Original paper
Nanoscale domain wall devices with magnetic tunnel junction read and write
Abstract
The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require external magnetic fields, or are based on conventional magnetic tunnel junctions (MTJs) that are not compatible with high-speed domain wall motion. Here we report domain wall devices based on perpendicular MTJs that offer electrical read...
Paper Details
Title
Nanoscale domain wall devices with magnetic tunnel junction read and write
Published Date
Jun 23, 2021
Journal
Volume
4
Issue
6
Pages
392 - 398
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Notes
History