Magnetic domain

Magnetization

Mathematics

Computer science

Magnetoresistance

Quantum mechanics

Computer hardware

Condensed matter physics

Tunnel junction

Magnetic storage

Optoelectronics

Thermodynamics

Magnetic field

Quantum tunnelling

Magnetoresistive random-access memory

Nanotechnology

Domain wall (magnetism)

Domain (mathematical analysis)

Tunnel magnetoresistance

Geometry

Layer (electronics)

Mathematical analysis

Materials science

Perpendicular

Spin-transfer torque

Physics

Torque

Random access memory

Nature Electronics

The manipulation of fast domain wall motion in magnetic nanostructures could form the basis of novel magnetic memory and logic devices. However, current approaches for reading and writing domain walls require external magnetic fields, or are based on conventional magnetic tunnel junctions (MTJs) that are not compatible with high-speed domain wall motion. Here we report domain wall devices based on perpendicular MTJs that offer electrical read and write, and fast domain wall motion via spin–orbit torque. The devices have a hybrid free layer design that consists of platinum/cobalt (Pt/Co) or a synthetic antiferromagnet (Pt/Co/Ru/Co) into the free layer of conventional MTJs. We show that our devices can achieve good tunnelling magnetoresistance readout and efficient spin-transfer torque writing that is comparable to current magnetic random-access memory technology, as well as domain wall depinning efficiency that is similar to stand-alone materials. We also show that a domain wall conduit based on a synthetic an...

Nanoscale domain wall devices with magnetic tunnel junction read and write