Experimental study of threshold voltage shift for Si:HfO₂ based ferroelectric field effect transistor

For a given three different Si doping concentrations at room and high temperatures, the threshold voltage shift (ΔVth) on silicon-doped hafnium-oxide-based ferroelectric field effect transistor (FeFET) is experimentally investigated. It turned out that charge trapping in the gate stack of FeFET (versus polarization switching in the gate stack of FeFET) adversely affects ΔVth. Charge trapping causes the positive ΔVth, while polarization switching...