Electrical engineering

Nanotechnology

Transistor

Organic chemistry

Analytical Chemistry (journal)

Engineering

Dielectric

Voltage

Chemistry

Materials science

Silicon nitride

Layer (electronics)

Silicon

Optoelectronics

Doping

Ferroelectricity

IEEE Electron Device Letters

We demonstrate ferroelectric (FE) memory transistors on a crystalline silicon channel with endurance exceeding 10 10 cycles. The ferroelectric transistors (FeFETs) incorporate a high- κ interfacial layer (IL) of thermally grown silicon nitride (SiN x ) and a thin 4.5 nm layer of Zr-doped FE-HfO 2 (HZO) on a ~30 nm silicon on insulator (SOI) channel. The device shows a ~1V memory window (MW) in a DC sweep of just ± 2.5V, and can be programmed and erased with voltage pulses of V G = ± 3V at a pulse width of 250 ns. The device also shows very good retention behavior. These results indicate that appropriate engineering of the IL layer could substantially improve FeFET device performance and reliability.

Ferroelectric HfO2 Memory Transistors With High-κ Interfacial Layer and Write Endurance Exceeding 1010 Cycles