Highly Thermally Conductive Graphene-Based Thermal Interface Materials with a Bilayer Structure for Central Processing Unit Cooling

Volume: 13, Issue: 21, Pages: 25325 - 25333
Published: May 19, 2021
Abstract
Innovations of transistors toward miniaturization and integration aggravate heat accumulation of central processing units (CPUs). Thermal interface materials (TIMs) are critical to remove the generated heat and to guarantee the device reliability. Herein, maltose-assisted mechanochemical exfoliation was proposed to prepare maltose-g-graphene as a structural motif of TIMs. Then, maltose-g-graphene/gelatin composite films with a bilayer structure...
Paper Details
Title
Highly Thermally Conductive Graphene-Based Thermal Interface Materials with a Bilayer Structure for Central Processing Unit Cooling
Published Date
May 19, 2021
Volume
13
Issue
21
Pages
25325 - 25333
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