Original paper
Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications
Volume: 68, Issue: 6, Pages: 2147 - 2151
Published: Dec 4, 2020
Abstract
In space, due to high energy particles, which cause single event upsets (SEUs), the traditional 6T SRAM cell becomes more susceptible to soft-error. In order to address this, a radiation hardened memory-by-design 10T (RHMD10T) SRAM cell is proposed in this brief. The relative strength of RHMD10T is estimated by comparing it with other contemporary cells such as QUATRO10T, QUCCE10T, QUATRO12T, QUCCE12T, NS10T and PS10T over various major design...
Paper Details
Title
Highly Stable Low Power Radiation Hardened Memory-by-Design SRAM for Space Applications
Published Date
Dec 4, 2020
Volume
68
Issue
6
Pages
2147 - 2151