Voltage

Engineering

Flicker noise

Bandwidth (computing)

Noise figure

Telecommunications

Amplifier

Computer science

Transistor

Wideband

Transconductance

Low-noise amplifier

Image (mathematics)

Electronic engineering

Artificial intelligence

Noise reduction

Noise (video)

CMOS

Electrical engineering

IEEE Journal of Solid-State Circuits

In this article, a new noise reduction/cancellation technique is proposed to improve noise figure (NF) of a broadband low-noise transconductance amplifier (LNTA) for 5G receivers. The LNTA combines a common-gate (CG) stage for wideband input matching and a common-source (CS) stage for canceling the noise and distortion of the CG stage. Yet, another noise reduction is applied to reduce the channel thermal noise of the noise cancellation stage itself. The technique further exploits current reuse and increases transconductance of the CS transistor while keeping its power consumption low. Fabricated in 28-nm CMOS, the proposed LNTA is capable of driving an external 50-Ω load and achieves a NF of 2.09-3.2 dB and input return loss (S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sub> ) better than -10 dB over the 3-dB bandwidth of 20 MHz-4.5 GHz while consuming 4.5 mW from a single 1-V power supply. The achieved gain (S <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">21</sub> ) and IIP3 are 15.2 dB and -4.6 dBm, respectively.

A 0.02–4.5-GHz LN(T)A in 28-nm CMOS for 5G Exploiting Noise Reduction and Current Reuse