Molybdenum disulfide

Chemical vapor deposition

Metallurgy

Materials science

Semiconductor

Physical chemistry

Sapphire

Laser

Physics

Nanotechnology

Optics

Wafer

Electronics

Monolayer

Chemistry

Optoelectronics

Nano Letters

Two-dimensional molybdenum disulfide (MoS2) is an emergent semiconductor with great potential in next-generation scaled-up electronics, but the production of high-quality monolayer MoS2 wafers still remains a challenge. Here, we report an epitaxy route toward 4 in. monolayer MoS2 wafers with highly oriented and large domains on sapphire. Benefiting from a multisource design for our chemical vapor deposition setup and the optimization of the growth process, we successfully realized material uniformity across the entire 4 in. wafer and greater than 100 μm domain size on average. These monolayers exhibit the best electronic quality ever reported, as evidenced from our spectroscopic and transport characterizations. Our work moves a step closer to practical applications of monolayer MoS2.

Wafer-Scale Highly Oriented Monolayer MoS<sub>2</sub> with Large Domain Sizes

Wafer-Scale Highly Oriented Monolayer MoS2 with Large Domain Sizes

Wafer-Scale Highly Oriented Monolayer MoS₂ with Large Domain Sizes