Effect of annealing process on hot-electron energy relaxation rates in n-type modulation-doped Ga0.68In0.32N0.017As/GaAs quantum wells via deformation potential and piezoelectric scatterings

Hot electrons relax by interacting with phonons, so information about the electron-phonon interaction mechanisms are obtained by examining the cooling processes of hot electrons. In this study, the effect of annealing time on the electron temperature and energy relaxation rates in as-grown and annealed n-type modulation-doped Ga0.68In0.32N0.017As0.983/GaAs quantum well (QW) samples were investigated by comparing the relative amplitudes of...